Bell-state tomography in a silicon many-electron artificial molecule.

An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at the atomic level is detrimental to quantum dot uniformity. Here we investigate two spin qubits confined in a silicon double quantum dot artificial molecule. Each quantum dot has a robust shell structure and, when operated at an occupancy of 5 or 13 electrons, has single spin-[Formula: see text] valence electron in its p- or d-orbital, respectively. These higher electron occupancies screen static electric fields arising from atomic-level disorder. The larger multielectron wavefunctions also enable significant overlap between neighbouring qubit electrons, while making space for an interstitial exchange-gate electrode. We implement a universal gate set using the magnetic field gradient of a micromagnet for electrically driven single qubit gates, and a gate-voltage-controlled inter-dot barrier to perform two-qubit gates by pulsed exchange coupling. We use this gate set to demonstrate a Bell state preparation between multielectron qubits with fidelity 90.3%, confirmed by two-qubit state tomography using spin parity measurements.

Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon.

Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates.

Probing a Spin Transfer Controlled Magnetic Nanowire with a Single Nitrogen-Vacancy Spin in Bulk Diamond.

The point-like nature and exquisite magnetic field sensitivity of the nitrogen vacancy (NV) center in diamond can provide information about the inner workings of magnetic nanocircuits in complement with traditional transport techniques. Here, we use a single NV in bulk diamond to probe the stray field of a ferromagnetic nanowire controlled by spin transfer (ST) torques. We first report an unambiguous measurement of ST tuned, parametrically driven, large-amplitude magnetic oscillations. At the same time, we demonstrate that such magnetic oscillations alone can directly drive NV spin transitions, providing a potential new means of control. Finally, we use the NV as a local noise thermometer, observing strong ST damping of the stray field noise, consistent with magnetic cooling from room temperature to ∼150 K.

Coherent coupling between a quantum dot and a donor in silicon.

Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a 31P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit.

Coupling a single electron spin to a microwave resonator: controlling transverse and longitudinal couplings.

Microwave-frequency superconducting resonators are ideally suited to perform dispersive qubit readout, to mediate two-qubit gates, and to shuttle states between distant quantum systems. A prerequisite for these applications is a strong qubit-resonator coupling. Strong coupling between an electron-spin qubit and a microwave resonator can be achieved by correlating spin- and orbital degrees of freedom. This correlation can be achieved through the Zeeman coupling of a single electron in a double quantum dot to a spatially inhomogeneous magnetic field generated by a nearby nanomagnet. In this paper, we consider such a device and estimate spin-resonator couplings of order ∼1 MHz with realistic parameters. Further, through realistic simulations, we show that precise placement of the double-dot relative to the nanomagnet allows to select between a purely longitudinal coupling (commuting with the bare spin Hamiltonian) and a purely transverse (spin non-conserving) coupling. Additionally, we suggest methods to mitigate dephasing and relaxation channels that are introduced in this coupling scheme. This analysis gives a clear route toward the realization of coherent state transfer between a microwave resonator and a single electron spin in a GaAs double quantum dot with a fidelity above 90%. Improved dynamical decoupling sequences, low-noise environments, and longer-lived microwave cavity modes may lead to substantially higher fidelities in the near future.

Telegraphic noise in transport through colloidal quantum dots.

We report measurements of electrical transport through single CdSe/CdS core/shell colloidal quantum dots (cQDs) connected to source and drain contacts. We observe telegraphic switching noise showing few plateaus at room temperature. We model and interpret these results as charge trapping of individual trap states, and therefore we resolve individual charge defects in these high-quality low-strain cQDs. The small number of observed defects quantitatively validates the passivation method based on thick CdS shells nearly lattice-matched to CdSe cores first developed to suppress photoluminescence blinking. Finally, we introduce a figure of merit useful to efficiently distinguish telegraphic noise from noise with a Gaussian distribution.

Nanofabrication of gate-defined GaAs/AlGaAs lateral quantum dots.

A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and entanglement, to solve certain problems exponentially faster than with the best known algorithms on a classical computer. Gate-defined lateral quantum dots on GaAs/AlGaAs are one of many avenues explored for the implementation of a qubit. When properly fabricated, such a device is able to trap a small number of electrons in a certain region of space. The spin states of these electrons can then be used to implement the logical 0 and 1 of the quantum bit. Given the nanometer scale of these quantum dots, cleanroom facilities offering specialized equipment- such as scanning electron microscopes and e-beam evaporators- are required for their fabrication. Great care must be taken throughout the fabrication process to maintain cleanliness of the sample surface and to avoid damaging the fragile gates of the structure. This paper presents the detailed fabrication protocol of gate-defined lateral quantum dots from the wafer to a working device. Characterization methods and representative results are also briefly discussed. Although this paper concentrates on double quantum dots, the fabrication process remains the same for single or triple dots or even arrays of quantum dots. Moreover, the protocol can be adapted to fabricate lateral quantum dots on other substrates, such as Si/SiGe.

Single-spin readout in a double quantum dot including a micromagnet.

We use photon-assisted tunneling (PAT) and an inhomogeneous Zeeman field to demonstrate spin-selective PAT readout with a double quantum dot. The inhomogeneous Zeeman field is generated by a proximal micromagnet, which provides different stray fields between the two dots, resulting in an energy difference between the interdot PAT of the up-spin state and that of the down-spin state. We apply various external magnetic fields to modify the relative filling weight between the up-spin and down-spin states and detect it by using a charge detection technique to probe the PAT induced charge delocalization in the double dot.

Insitu reduction of charge noise in GaAs/AlxGa1-xAs Schottky-gated devices.

We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the effect of "bias cooling." Upon noise reduction, the noise power spectrum generally changes from Lorentzian to 1/f type. By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise.

Microwave band on-chip coil technique for single electron spin resonance in a quantum dot.

Microwave band on-chip microcoils are developed for the application to single electron spin resonance measurement with a single quantum dot. Basic properties such as characteristic impedance and electromagnetic field distribution are examined for various coil designs by means of experiment and simulation. The combined setup operates relevantly in the experiment at dilution temperature. The frequency responses of the return loss and Coulomb blockade current are examined. Capacitive coupling between a coil and a quantum dot causes photon assisted tunneling, whose signal can greatly overlap the electron spin resonance signal. To suppress the photon assisted tunneling effect, a technique for compensating for the microwave electric field is developed. Good performance of this technique is confirmed from measurement of Coulomb blockade oscillations.

Pairing of spin excitations in lateral quantum dots.

We demonstrate the existence of correlated electronic states as paired spin excitations of lateral quantum dots in the integer quantum Hall regime. Starting from the spin-singlet filling-factor nu=2 droplet, by increasing the magnetic field we force the electrons to flip spins and increase the spin polarization. We identify the second spin-flip process as one accompanied by correlated, spin depolarized phases, interpreted as pairs of spin excitons. The correlated states are identified experimentally in few-electron lateral quantum dots using high source-drain voltage spectroscopy.